 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Semiconductor RFM12N35, RFM12N40 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. BRAND RFM12N35 RFM12N40 September 1998 Features * 12A, 350V and 400V * rDS(ON) = 0.500 [ /Title (RFM12 N35, RFM12 N40) /Subject 12A, 50V nd 00V, .500 hm, -Chanel ower OSETs) /Author ) /Keyords 12A, 50V nd 00V, .500 hm, -Chanel ower OSETs) /Cretor () /DOCIN Ordering Information PART NUMBER RFM12N35 RFM12N40 PACKAGE TO-204AA TO-204AA Formerly developmental type TA17434. Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1787.1 5-1 RFM12N35, RFM12N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N35 350 350 12 24 20 150 1.2 -55 to 150 260 RFM12N40 400 400 12 24 20 150 1.2 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250mA, VGS = 0V 350 400 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0 VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC 2 VGS = 0V, VDS = 25V, f = 1MHz (Figures 9) 30 105 480 140 4 1 25 100 0.500 3 6.0 50 150 750 200 3000 900 400 0.83 V V V A A nA V V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM12N35 RFM12N40 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 12A, VGS = 10V, (Figures 6, 7) ID = 6A, VGS = 10V ID = 12A, VGS = 10V ID 6A, VDS = 200V, RG = 50, VGS = 10V, RL = 33, (Figures 10, 11, 12) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 6A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 950 MAX 1.4 UNITS V ns 5-2 RFM12N35, RFM12N40 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0.8 Unless Otherwise Specified 14 12 10 8 6 4 2 0 25 0.6 0.4 0.2 0 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC ID (MAX) CONTINUOUS 25 PULSE DURATION = 80s DUTY CYCLE 2% 20 ID, DRAIN CURRENT (A) VGS = 20V VGS = 8-10V VGS = 7V VGS = 6V VGS = 5V ID, DRAIN CURRENT (A) 10 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS (MAX) = 350V RFM12N35 VDSS (MAX) = 400V RFM12N40 1 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 1000 15 10 1 5 VGS = 4V 0 0 2 4 6 8 10 12 14 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS ID(ON), DRAIN TO SOURCE CURRENT (A) 30 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 6 0 0 10 TC = 25oC TC = -40oC TC = 125oC VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 20 10 TC = 125oC TC = -40oC 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 20 30 ID, DRAIN CURRENT (A) 40 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFM12N35, RFM12N40 Typical Performance Curves 4 NORMALIZED DRAIN TO SOURCE ON RESISTANCE Unless Otherwise Specified (Continued) NORMALIZED GATE THRESHOLD VOLTAGE ID = 12A VGS = 10V 2 ID = 250A VGS = VDS 3 1.5 2 1 1 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 3000 300 VDD = BVDSS 200 GATE SOURCE VOLTAGE RL = 33.3 IG(REF) = 2.5mA VGS = 10V 8 VDD = BVDSS 6 2000 CISS 4 1000 COSS CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 100 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 2 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Harris Application Notes AN7254 and 7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
Price & Availability of RFM12N40
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |